Rapid Access Proposal: Spin-On Doping of Two-Dimensional Van der Waals Materials
EMSL Project ID
49722
Abstract
The main objective of this rapid-access user proposal is to validate the spin-on doping as a viable approach for controlling the majority carrier type (i.e. p- vs. n-type) and the carrier density in two-dimensional (2D) van der Waals semiconductors. Using 2D MoS2 as the model system, the specific aim of this proof-of-concept study is to verify the substitutional doping using x-ray photoelectron spectroscopy and atom-probe tomography. This project aims to advance a fundamental aspect underpinning photocatalysis, an important approach to sustainable and clean energy sources. Specifically, the capability to control the p- vs. n-type electrical properties is the basis for forming p-n junctions, which will significantly enhance the photocatalytic efficiency by separating the photogenerated electrons and holes, thus minimizing carrier loss due to recombinations. Solar photochemical energy conversion is important for generating chemical fuels and thus is important for DOE’s development of solar energy as a viable component of the nation’s energy supply. This research supports molecular-level research on solar energy capture and conversion in the condensed phase and at interfaces of a nanostructured material which is relevant to EMSL’s Energy Materials & Processes science theme.
Project Details
Project type
Limited Scope
Start Date
2017-04-24
End Date
2017-06-24
Status
Closed
Released Data Link
Team
Principal Investigator