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Ion Channeling Studies of Epitaxial Oxide Films and Gas-Solid interfaces.


EMSL Project ID
8222a

Abstract

The proposal addresses two important research areas using the on RBS, ion channeling and nuclear reaction analysis. EMSL ion accelerator facility will be used for both projects.

The first involves analysis of oxide films for epitaxy location of diffused and implanted impurities by RBS/C in the epitaxial oxide films. Oxide films metals will be grown (at WSU) on lattice matched single crystal substrates by 2 different methods (MOD and reactive sputter deposition). They will be compared for epitaxial quality, damage profile and lattice location of impurities. The results from ion channeling analysis will be complemented with results from other techniques such as XRD and Raman spectroscopy for structural analysis. RBS and AES depth profiling will be used to investigate ion beam induced mixing at an oxide-oxide interface.

The second research project addresses the use of ion channeling technique for in-situ gas-solid interface studies. Lattice location of lighter chemisorbed atoms on epitaxial metal films on single crystal surfaces will investigated by ion channeling technique using a cell arrangement in the target chamber. The cell is designed to operate at high differential pressure and temperatures up to 500C. The adsorption studies of CO and NO on metals such as Pt and Rh are important for automotive catalysis. Measurement of the concentration of the adsorbed atoms (C, N and O) in-situ by nuclear reaction analysis and their location in the lattice by ion channeling is considered very important in understanding such automotive catalysts.

Project Details

Project type
Large-Scale EMSL Research
Start Date
2006-09-01
End Date
2007-10-28
Status
Closed

Team

Principal Investigator

Karur Padmanabhan
Institution
Wayne State University