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Analysis of the composition of Cu films


EMSL Project ID
16099

Abstract

Microstructure of Cu films used in modern integrated circuit interconnect lines is important in controlling both manufacturability and reliability of the in-service chip. The microstructure as it evolves after electroplating is a strong function of deposition conditions and bath chemistry. This dependence is not well-understood, particularly the chemistry effect on the structure.

The grain size and crystallographic texture evolution of Cu films plated using various bath chemistries has been investigated by electron backscatter diffraction. Some of this work has tracked boundary motion in-situ (with the use of a heating stage in the SEM). The structures of these films are remarkably different, with the chemistry of the plated films being the only variable. The films are all Cu with supposed trace elements of various organic molecules. We hope to measure this chemistry difference, possibly by means of SIMS, and surmise from these measurements, the effect of various bath additives on surface/interface energy, boundary mobility, etc.

Project Details

Project type
Exploratory Research
Start Date
2005-09-16
End Date
2006-04-18
Status
Closed

Team

Principal Investigator

David Field
Institution
Washington State University