High-resolution Ion Scattering Studies of nano-scale oxide films and thermal stability of oxide-semiconductor interfaces
EMSL Project ID
17102
Abstract
High-dielectric constant oxides are presently being investigated for potential applications in future nano-electronic devices. Stability of high-dielectric constant oxide films on semiconductor substrates is an important area requiring fundamental studies. The nature of interfaces between the oxide film and substrate plays an important role in determining the properties of devices fabricated from such layers. We propose to use the unique ion beam facilities at PNNL for basic research towards understanding the stability of oxide films such as HfO2 and La2O3 on Si and other high mobility semiconductor substrates. In particular, we plan to use ion scattering methods such as nuclear reaction analysis to study precisely the amount of oxygen present in the thin film as a function of thermal treatment in controlled oxygen partial pressures. This will help understand the kinetics of oxygen transport through such oxides and also enable monitoring changes at the oxide-semiconductor interface. In addition to studying the total oxygen content, we also plan to study the low temperature photo-activated oxidation kinetics of thin metal films using this technique. This will reveal for the first time, mechanisms involved in photo-activated oxidation of metals which is of significant interest not only for basic research but also to a diverse community of researchers working in the areas of nano-electronics and spintronics. The experiments proposed here plan to take advantage of the unique instrumentation at PNNL. This will be of tremendous use to my research program at Harvard University and the results will be of immense value to the materials research community.PNNL Collaboator: Dr. Theva Thevuthasan
Project Details
Project type
Exploratory Research
Start Date
2006-03-15
End Date
2007-01-19
Status
Closed
Released Data Link
Team
Principal Investigator
Team Members
Related Publications
Papers
On the stability and oxidation of single crystal (100) InAs surfaces”, C.L. Chang, V. Shutthanandan, S.C. Singhal and S. Ramanathan, ECS Transactions. (accepted, 2007)
In-situ studies on stoichiometry and structure of thin film yttria-stabilized zirconia under thermal processing”, C.L. Chang, V. Shutthanandan, S.C. Singhal and S. Ramanathan, Mater. Res. Soc. Symp. Proc. (accepted, 2007).
In-situ ion scattering and X-ray photoelectron spectroscopy studies of stability and nanoscale oxidation of single crystal (100) InAs”, C.L. Chang, V. Shutthanandan, S.C. Singhal and S. Ramanathan, Applied Physics Letters, 90, 203109 (2007)
Presentations
In-Situ Studies on Stability and Oxidation of Single Crystal (100) InAs Surfaces", C.L. Chang, V. Shutthanandan, S.C. Singhal and S. Ramanathan, E4 Symposium, 212th Meeting of the Electrochemical Society, Washington, DC, 2007
In-situ studies on stoichiometry and structure of thin film yttria-stabilized zirconia under thermal processing”, C.L. Chang, V. Shutthanandan, S.C. Singhal and S. Ramanathan, MRS Spring Meeting in San Francisco, CA, 2007.
“In-situ characterization of doped-zirconia / Ge interfaces”, C.L. Chang, V. Shutthanandan and S. Ramanathan, Proceedings of Materials Science and Technology Conference, 2006
In-situ studies of initial oxidation of bare InAs surfaces and oxide/InAs interfaces”, C.L. Chang, V. Shutthanandan and S. Ramanathan, IEEE SISC, San Diego, CA, 2006