ToF-SIMS Characterization of Ni Films Used to Grow Few-Layer Graphene
EMSL Project ID
32907
Abstract
The growth of single- to few- layer graphene is implemented by ambient pressure CVD on thin Ni films (~500 nm). ToF-SIMS will be used to investigate the growth mechanisms of graphene over the Ni films. The depth profile of carbon concentration in the Ni films after CVD will be investigated and used to determine whether the Ni films contain carbon above or below the saturation limit after CVD. Two dimensional mapping of the carbon concentration at a given depth of the Ni film will also be characterized, especially to compare the region on top of a single crystal domain vs. the grain boundary. This information will be very useful in revealing whether graphene precipitates during cooling of the Ni film in the CVD process or during the exposure of the Ni film to methane.
Project Details
Project type
Limited Scope
Start Date
2008-12-22
End Date
2009-02-17
Status
Closed
Released Data Link
Team
Principal Investigator