Growth Mechanism of Hexagonal Boron Nitride on Metal Catalyst Substrates
EMSL Project ID
47779
Abstract
The objective of this work is to better understand the impact and role of metal catalysts towards the synthesis of hexagonal boron nitride. High quality hexagonal boron nitride has recently been shown to be an excellent substrate and platform for studying new physical phenomena in two dimensional materials such as graphene. This material can enable new experimental studies of ballistic transport in graphene devices as well as serve as an ultra-thin insulator for flexible electronics. This wide band gap material can also serve as a ultra-violet light emitting material for optical applications. However, synthesis of high quality boron nitride is still quite difficult often requiring either high temperature or high pressure to grow high quality crystals. One key parameter important for the synthesis of hexagonal boron nitride is that of the role of the metal catalyst substrate and its boron and nitrogen solubility. Therefore, in order to further investigate the role boron and nitrogen solubility inside the bulk of the metal, time of flight secondary ion mass spectroscopy at EMSL are necessary for careful quantification of the amount of boron and nitrogen dissolved into the metal catalyst. Resources at EMSL will prove insightful for answering these questions and further improve upon the synthesis of hexagonal boron nitride. Request submitted to meet deadline of February 28th for manuscript submission.
Project Details
Project type
Limited Scope
Start Date
2013-02-06
End Date
2013-04-08
Status
Closed
Released Data Link
Team
Principal Investigator